Abstract
As discussed in Chap. 1, ultrafast optical spectroscopy provides a powerful means of investigating relaxation as well as transport phenomena. The preceding chapters have discussed how ultrafast optical studies have provided invaluable information on the relaxation of interband polarization and non-thermal carriers, on the cooling of hot carriers, and on the dynamics of phonons and excitons in semiconductors. We now discuss the use of ultrafast spectroscopy to investigate dynamics of tunneling and transport in semiconductors and their nanostructures. Since transport over macroscopic distances in semiconductor nanostructures is controlled by many different physical processes, including tunneling, we begin with a discussion of tunneling in this chapter, and discuss carrier transport in Chap. 8.
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Shah, J. (1999). Carrier Tunneling in Semiconductor Nanostructures. In: Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Springer Series in Solid-State Sciences, vol 115. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03770-6_7
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DOI: https://doi.org/10.1007/978-3-662-03770-6_7
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