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Analysis of Defects in Devices and Silicon Crystals in Production Lines

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Ultraclean Surface Processing of Silicon Wafers

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Abstract

With the further miniaturization and higher integration of devices, the cleanliness of Si surface regions where the devices are fabricated is becoming more and more important. In particular, in order to guarantee long holding times for DRAM devices and to improve the reliability of thinner oxide films. It is necessary that the number of defects is reduced as much as possible from the Si surface region [1].

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Author information

Authors and Affiliations

  1. NEC, Japan

    Tomohisa Kitano & Kazuko Ikeda

Authors
  1. Tomohisa Kitano
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  2. Kazuko Ikeda
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Editor information

Editors and Affiliations

  1. ULSI R&D Laboratories, Sony Corporation Semiconductor Company, 243-8585, Atsugi, Japan

    Takeshi Hattori

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© 1998 Springer-Verlag Berlin Heidelberg

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Kitano, T., Ikeda, K. (1998). Analysis of Defects in Devices and Silicon Crystals in Production Lines. In: Hattori, T. (eds) Ultraclean Surface Processing of Silicon Wafers. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03535-1_20

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  • DOI: https://doi.org/10.1007/978-3-662-03535-1_20

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08272-6

  • Online ISBN: 978-3-662-03535-1

  • eBook Packages: Springer Book Archive

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