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Semiconductor Lasers

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Integrated Optics

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Abstract

In the preceding chapter, we discussed the basic principles of light emission in a semiconductor. Probably the most significant feature of this light emission is that it is possible to design a light source in such a way that stimulated emission of photons will predominate over both spontaneous emission and absorption. If a resonant reflecting structure such as a pair of plane, parallel end faces is provided, a lasing mode can be established and coherent optical emission will result. In this chapter, we consider several basic semiconductor laser structures and develop the quantitative theory necessary to calculate their expected performance characteristics.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Delaware, 140 Evans Hall, 19716, Newark, DE, USA

    Professor Robert G. Hunsperger

Authors
  1. Professor Robert G. Hunsperger
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© 1995 Springer-Verlag Berlin Heidelberg

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Hunsperger, R.G. (1995). Semiconductor Lasers. In: Integrated Optics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03159-9_11

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  • DOI: https://doi.org/10.1007/978-3-662-03159-9_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-59481-9

  • Online ISBN: 978-3-662-03159-9

  • eBook Packages: Springer Book Archive

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