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{111} Surfaces of Compounds with Zincblende Structure

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Semiconductor Surfaces and Interfaces

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 26))

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Abstract

Bulk-terminated {111}-1 × 1 surfaces of zincblende-structure compounds would be either cation- or anion-terminated. Such [111]- and [1̄1̄1̄]-oriented surfaces, respectively, are found to be 2 × 2-reconstructed. The GaAs(111)-2 × 2 structure results from the existence of Ga vacancies which expose three As atoms of the second layer. The atomic arrangement is thus similar to the Ga-As zigzag chains on cleaved (110)-1 × 1 surfaces. The GaAs(1̄1̄1̄)-2 × 2 reconstruction, on the other hand, consists of Astrimers on a complete As layer beneath. The presence of As vacancies is excluded since their formation is endothermic on such surfaces.

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© 1995 Springer-Verlag Berlin Heidelberg

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Mönch, W. (1995). {111} Surfaces of Compounds with Zincblende Structure. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03134-6_13

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  • DOI: https://doi.org/10.1007/978-3-662-03134-6_13

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-58625-8

  • Online ISBN: 978-3-662-03134-6

  • eBook Packages: Springer Book Archive

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