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Semiconductor Physics pp 273–294Cite as

Quantum Effects in Transport Phenomena

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

Abstract

In Chap. 2 we learnt how the quantization of the atomic energy levels results in the band structure of the crystalline solid. However, this is not the only domain of quantum mechanics in semiconductivity. Although most transport phenomena can be explained by assuming a classical electron gas, there are some which can be understood only by quantum mechanical arguments. In Sect. 9.1 we will treat phenomena which rely on the quantum mechanical tunnel effect, while in Sects. 9.2–9.4 the quantization of electron orbits in a strong magnetic field with the formation of Landau levels will be the basis for an understanding of the oscillatory behavior of transport phenomena.

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1991 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1991). Quantum Effects in Transport Phenomena. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02663-2_9

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  • DOI: https://doi.org/10.1007/978-3-662-02663-2_9

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  • Print ISBN: 978-3-662-02665-6

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