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Charge Transport and Scattering Processes in the Many-Valley Model

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Semiconductor Physics

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

Abstract

In Sect. 2.4, Figs. 2.26, 27, we saw that the conduction bands of silicon and germanium have constant energy surfaces near the band edge which are either 8 half-ellipsoids of 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the many-valley model of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

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Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

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  1. Professor Dr. Karlheinz Seeger
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© 1991 Springer-Verlag Berlin Heidelberg

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Seeger, K. (1991). Charge Transport and Scattering Processes in the Many-Valley Model. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02663-2_7

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  • DOI: https://doi.org/10.1007/978-3-662-02663-2_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02665-6

  • Online ISBN: 978-3-662-02663-2

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