Skip to main content
SpringerLink
Log in
Book cover

Semiconductor Physics pp 291–301Cite as

Impact Ionization and Avalanche Breakdown

  • Chapter

  • 367 Accesses

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 40))

Abstract

Some aspects of impact ionization and avalanche breakdown in semiconductors are similar to the corresponding phenomena in gaseous discharges. Semiconductors may serve as model substances for gaseous plasmas since their ionic charges are practically immobile and therefore the interpretation of experimental data is facilitated. Impact ionization has been achieved both in the bulk of homogeneously doped semiconductors at low temperatures and in p-n junctions at room temperature. We will discuss these cases separately.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. Lautz: Festkörper-Probleme VI, 21 ( Vieweg, Braunschweig 1961 )

    Google Scholar 

  2. S.H. Koenig, G.R. Gunther-Mohr: J. Phys. Chem. Solids 2, 268 (1957)

    Article  ADS  Google Scholar 

  3. N. Sciar, E. Burstein: J. Phys. Chem. Solids 2, 1 (1967)

    Google Scholar 

  4. K. Baumann, M. Kriechbaum, H. Kahlert: J. Phys. Chem. Solids 31, 1163 (1970)

    Article  ADS  Google Scholar 

  5. S.H. Koenig: In Proc. Int’l Conf. Solid State Physics, Brussels 1958, ed. by M. Desirant ( Academic, London 1960 ) p. 422

    Google Scholar 

  6. M. Lax: J. Phys. Chem. Solids 8, 66 (1959)

    Article  ADS  Google Scholar 

  7. G. Bauer, F. Kuchar: Phys. Status Solidi (a) 13, 169 (1972)

    Article  ADS  Google Scholar 

  8. W.P. Dumke: Phys. Rev. 167, 783 (1968)

    Article  ADS  Google Scholar 

  9. R.C. Curby, D.K. Ferry: Phys. Status Solidi (a) 15, 319 (1973)

    Article  ADS  Google Scholar 

  10. G. Nimtz: In Proc. Int’l Conf. Phys. Semicond., Cambridge MA 1970, ed. By S.P. Keller, J.C. Hensel, F. Stern ( USAEC, Oak Ridge, TN 1970 ) p. 396

    Google Scholar 

  11. A.L. McWhorter, R.H. Rediker: Proc. Int’l Conf. Phys. Semicond., Prague 1960 (Czech. Acad. Sciences, Prague 1960 ) p. 134

    Google Scholar 

  12. B.K. Ridley: Proc. Phys. Soc., London 81, 996 (1963)

    Article  Google Scholar 

  13. A.M. Barnett: IBM J. Res. Dev. 13, 522 (1969)

    Article  Google Scholar 

  14. R.F. Kazarinov, V.G. Skobov: Zh. Eksp. Teor. Fiz. 42 1047 (1962) [Engl. transl.: Sov. Phys. - JETP 15 726 (1962)]

    Google Scholar 

  15. B. Ancker-Johnson: In Semiconductors and Semimetals, Vol.1, ed. by R.K. Willardson, A.C. Beer ( Academic, New York 1966 )

    Google Scholar 

  16. A.G. Chynoweth, K.G. McKay: Phys. Rev. 108, 29 (1957)

    Article  ADS  Google Scholar 

  17. A.G. Chynoweth: Semiconductors and Semimetals 4, 263 ( Academic, New York 1968 )

    Google Scholar 

  18. C.A. Lee, R.A. Logan, R.L. Batdorf, J.J. Kleimack, W. Wiegman: Phys. Rev. 134, A761 (1964)

    Article  ADS  Google Scholar 

  19. S.M. Sze: Physics of Semiconductor Devices, ( Wiley, New York 1969 ) p. 60

    Google Scholar 

  20. G.A. Baraff: Phys. Rev. 128, 2507 (1962); ibid. 133, A26 (1964)

    Google Scholar 

  21. J.E. Carroll: Hot Electron Microwave Generators ( Arnold, London 1970 )

    Google Scholar 

  22. A.F. Gibson, J.W. Granville, E.G.S. Paige: J. Phys. Chem. Solids 19, 198 (1961)

    Article  ADS  Google Scholar 

  23. A.E. Michel, M.I. Nathan, J.C. Marinace: J. Appl. Phys. 35, 3543 (1964)

    Article  ADS  Google Scholar 

  24. W. Shockley: Bell Syst. Tech. J. 33, 799 (1954)

    Google Scholar 

  25. W.T. Read: Bell. Syst. Tech. J. 37, 401 (1958)

    Google Scholar 

  26. H. Hartnagel: Semiconductor Plasma Instabilities ( Heinemann, London 1969 )

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ludwig Boltzmann Institut für Festkörperphysik, Kopernikusgasse 15, A-1060, Wien, Austria

    Professor Dr. Karlheinz Seeger

  2. Institut für Festkörperphysik, Universität Wien, Boltzmanngasse 5, A-1090, Wien, Austria

    Professor Dr. Karlheinz Seeger

Authors
  1. Professor Dr. Karlheinz Seeger
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1989 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Seeger, K. (1989). Impact Ionization and Avalanche Breakdown. In: Semiconductor Physics. Springer Series in Solid-State Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02576-5_10

Download citation

  • DOI: https://doi.org/10.1007/978-3-662-02576-5_10

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19410-1

  • Online ISBN: 978-3-662-02576-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation