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Properties of Diodes and Thyristors in Electric Circuits

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Power Semiconductors

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Abstract

There exist certain specific parameters and features of power thyristors and diodes whose proper dimensioning is essential for the successful application of power devices in electric circuits. This chapter analyses primarily the role of the applied rate of rise of the blocking voltage dU d/dt or the critical value (dU d/dt)crit; methods of preventing a functional failure of a thyristor due to exceeding the value (dU d/dt)crit are also introduced.

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References

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Authors and Affiliations

  1. Department of Microelectronics, Technical University of Prague, Suchbátorova 2, 166 27, Prague 6, Czechoslovakia

    Professor Ing. M. Kubát Dr.Sc.

Authors
  1. Professor Ing. M. Kubát Dr.Sc.
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© 1984 Prof. Ing. Milan Kubát, Dr. Sc.

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Kubát, M. (1984). Properties of Diodes and Thyristors in Electric Circuits. In: Power Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02418-8_11

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  • DOI: https://doi.org/10.1007/978-3-662-02418-8_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02420-1

  • Online ISBN: 978-3-662-02418-8

  • eBook Packages: Springer Book Archive

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