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In-Growth Characterization Techniques

  • Marian A. Herman
  • Helmut Sitter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 7)

Abstract

The experimental arrangement of MBE is unique among epitaxial thin film preparation methods in that it enables one to study and control the growth process in situ in several ways. In particular, reflection high energy electron diffraction (RHEED) allows direct measurements of the surface structure of the substrate wafer and the already grown epilayer. It also allows observation of the dynamics of MBE growth [4.1–20]. The forward scattering geometry of RHEED is most appropriate for MBE, since the electron beam is at grazing incidence (Fig. 3.28), whereas the molecular beams impinge almost normally on the substrate. Therefore, RHEED may be called an in-growth surface analytical technique.

Keywords

Reciprocal Lattice Reciprocal Space Reflection High Energy Electron Diffraction Cadmium Mercury Telluride Reciprocal Lattice Vector 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1989

Authors and Affiliations

  • Marian A. Herman
    • 1
  • Helmut Sitter
    • 2
  1. 1.Institute of PhysicsPolish Academy of SciencesWarszawaPoland
  2. 2.Institut für ExperimentalphysikJohannes-Kepler-UniversitätLinz/AuhofAustria

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