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Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devices

  • R. Nakano
  • H. Matsumoto
  • N. Miura
  • N. Sakagami
  • J. Shimada
  • T. Endo
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

The excitation mechanism in AC-electroluminescent (EL) devices has been the subject of much interest and controversy. Some EL properties have been successfully interpreted on the basis of a direct impact excitation model. However, a resonant energy transfer model as a dominant excitation process has been presented[1, 2, 3]. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion[2, 4, 5, 6]. This paper reports the experimental results of transient behavior between broadband and Tb3+ emission in ZnS thin-film EL devices excited by an alternating pulse voltage of very narrow width.

Keywords

Heat Treatment Temperature Transient Behavior Excitation Mechanism Emission Layer 350nm Emission 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • R. Nakano
    • 1
  • H. Matsumoto
    • 1
  • N. Miura
    • 1
  • N. Sakagami
    • 1
  • J. Shimada
    • 1
  • T. Endo
    • 1
  1. 1.Faculty of EngineeringMeiji UniversityTama-ku, Kawasaki 214Japan

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