Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devices
The excitation mechanism in AC-electroluminescent (EL) devices has been the subject of much interest and controversy. Some EL properties have been successfully interpreted on the basis of a direct impact excitation model. However, a resonant energy transfer model as a dominant excitation process has been presented[1, 2, 3]. There are only a few reports on studies of the relation between broad-band emission intrinsic to ZnS host and emission of doped ion[2, 4, 5, 6]. This paper reports the experimental results of transient behavior between broadband and Tb3+ emission in ZnS thin-film EL devices excited by an alternating pulse voltage of very narrow width.
KeywordsHeat Treatment Temperature Transient Behavior Excitation Mechanism Emission Layer 350nm Emission
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