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AC Electroluminescence of Ho-Implanted ZnS Thin Films

  • Lijian Meng
  • Changhua Li
  • Guozhu Zhong
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Rare earth ions are considered to be advantageous in the production of a wide variety of emission colors. To develop multi-color displays, ZnS:RE electroluminescence thin film (ELTF) devices have been designed [1], In order to get uniform doping and avoid the effect of fluorine ions we fabricate ZnS:Ho thin films by means of ion-implantation. This paper will discuss the effect of the annealing temperature on ACEL characteristics of these devices.

Keywords

Emission Intensity Complex Center Defect Center High Energy Level Emission Color 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    E.W. Chase: J. Appl. Phys. 40, 2512 (1969).ADSCrossRefGoogle Scholar
  2. 2.
    T. Suntola: U. S. Patent, 4058430.Google Scholar
  3. 3.
    J.Q. Yu: Chinese J. Semi. 1, 192 (1980).Google Scholar
  4. 4.
    G.Z. Zhong: SID 88 Digest, 287 (1988).Google Scholar
  5. 5.
    I. Szczurek: J. Luminescence 14, 389 (1976).ADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • Lijian Meng
    • 1
  • Changhua Li
    • 1
  • Guozhu Zhong
    • 1
  1. 1.Changchun Institute of PhysicsAcademia SinicaP.R. China

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