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AC Electroluminescence of Ho-Implanted ZnS Thin Films

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 38))

Abstract

Rare earth ions are considered to be advantageous in the production of a wide variety of emission colors. To develop multi-color displays, ZnS:RE electroluminescence thin film (ELTF) devices have been designed [1], In order to get uniform doping and avoid the effect of fluorine ions we fabricate ZnS:Ho thin films by means of ion-implantation. This paper will discuss the effect of the annealing temperature on ACEL characteristics of these devices.

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References

  1. E.W. Chase: J. Appl. Phys. 40, 2512 (1969).

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  2. T. Suntola: U. S. Patent, 4058430.

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  3. J.Q. Yu: Chinese J. Semi. 1, 192 (1980).

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  4. G.Z. Zhong: SID 88 Digest, 287 (1988).

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  5. I. Szczurek: J. Luminescence 14, 389 (1976).

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© 1989 Springer-Verlag Berlin, Heidelberg

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Meng, L., Li, C., Zhong, G. (1989). AC Electroluminescence of Ho-Implanted ZnS Thin Films. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_33

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  • DOI: https://doi.org/10.1007/978-3-642-93430-8_33

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93432-2

  • Online ISBN: 978-3-642-93430-8

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