Abstract
Rare earth ions are considered to be advantageous in the production of a wide variety of emission colors. To develop multi-color displays, ZnS:RE electroluminescence thin film (ELTF) devices have been designed [1], In order to get uniform doping and avoid the effect of fluorine ions we fabricate ZnS:Ho thin films by means of ion-implantation. This paper will discuss the effect of the annealing temperature on ACEL characteristics of these devices.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Meng, L., Li, C., Zhong, G. (1989). AC Electroluminescence of Ho-Implanted ZnS Thin Films. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_33
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DOI: https://doi.org/10.1007/978-3-642-93430-8_33
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-93432-2
Online ISBN: 978-3-642-93430-8
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