AC Electroluminescence of Ho-Implanted ZnS Thin Films
Rare earth ions are considered to be advantageous in the production of a wide variety of emission colors. To develop multi-color displays, ZnS:RE electroluminescence thin film (ELTF) devices have been designed , In order to get uniform doping and avoid the effect of fluorine ions we fabricate ZnS:Ho thin films by means of ion-implantation. This paper will discuss the effect of the annealing temperature on ACEL characteristics of these devices.
KeywordsEmission Intensity Complex Center Defect Center High Energy Level Emission Color
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