Advertisement

Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?

  • J. M. Langer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

The Coulomb interaction between a free carrier and the electrons at a localized center may lead to either impact excitation, or to a reverse effect — the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed. I also comment on limits imposed by the effect on a possible laser action in systems utilizing intra-center radiative transitions in order to achieve laser action.

Keywords

Free Carrier Depletion Layer Exchange Term Shallow Donor Impact Excitation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    P. J. Dean: J. Luminescence 23, 17 (1981).ADSCrossRefGoogle Scholar
  2. 2.
    J. M. Langer: In Optoelectronic Materials and Devices, ed. by M. A. Herman (PWN-Polish Scientific Publishers, Warsaw 1983) p. 303.Google Scholar
  3. 3.
    J. W. Allen and S. G. Ayling: J. Phys. C 19, L369 (1986).ADSCrossRefGoogle Scholar
  4. 4.
    J. M. Langer: J. Luminescence 23 141 (1981).ADSCrossRefGoogle Scholar
  5. 5.
    P. T. Landsberg: Proc. Roy. Soc. London A 331, 103 (1972).ADSCrossRefGoogle Scholar
  6. 6.
    D. J. Robbins: phys. stat. sol. (b) 97, 9, 387 and 98, 11 (1980).CrossRefGoogle Scholar
  7. 7.
    J. W. Allen: J. Phys. C 19, 6287 (1986).ADSCrossRefGoogle Scholar
  8. 8.
    J. M. Langer, A. Lemańska-Bajorek and A. Suchocki: Appl. Phys. Lett. 39, 385 (1981).ADSCrossRefGoogle Scholar
  9. 9.
    A. M. Stoneham: Rep. Progr. Phys. 44, 1251 (1979); P. T. Landsberg: phys. stat. sol (b) 41, 457 (1970); J. M. Langer: in Defects in Crystals, ed. by E. Mizera (World Scientific, Singapore, 1987), p. 50.ADSCrossRefGoogle Scholar
  10. 10.
    N. T. Gordon and J. W. Allen: Solid State Commun. 37, 1441 (1981).CrossRefGoogle Scholar
  11. 11.
    J. M. Langer, A. Suchocki, Le Van Hong, P. Ciepielewski and W. Walukiewicz: Physica 117 & 118, 152 (1983).Google Scholar
  12. 12.
    J. M. Langer and Le Van Hong: J. Phys. C. 17, 1923 (1984).CrossRefGoogle Scholar
  13. 13.
    S. G. Ayling and J. W. Allen: J. Phys. C. 20, 4251 (1987).ADSCrossRefGoogle Scholar
  14. 14.
    P. B. Klein, J. E. Furneaux and R. L. Henry: Phys. Rev. B 29, 1947 (1984).ADSCrossRefGoogle Scholar
  15. 15.
    A. Suchocki and J. M. Langer: Phys. Rev. B39, (1989), to be published.Google Scholar
  16. 16.
    J. M. Langer: in Rare Earth Spectroscopy, ed. by B. Jeżowska-Trzebiatowska, J. Legendziewicz and W. Stręk, (World Scientific, Singapore 1985) p. 523.Google Scholar
  17. 17.
    J. M. Langer: J. Luminescence 40 & 41, 589 (1988).ADSCrossRefGoogle Scholar
  18. 18.
    V. M. Agranovich: Uspekchi Fiz. Nauk 112, 143 (1974).CrossRefGoogle Scholar
  19. 19.
    D. L. Dexter: J. Chem. Phys. 21, 836 (1953).ADSCrossRefGoogle Scholar
  20. 20.
    J. A. Majewski and J. M. Langer: Acta Phys. Polon. A67, 51 (1985).Google Scholar
  21. 21.
    W. T. Tsang and R. A. Logan: Appl. Phys. Lett. 49, 1686 (1986).ADSCrossRefGoogle Scholar
  22. J. P. van der Ziel, M. G. Oberg and R. A. Logan: Appl. Phys. Lett. 50, 1313 (1987).ADSCrossRefGoogle Scholar
  23. 22.
    S. Kuboniwa, H. Kawaji and T. Hoshina: Jap. J. Appl. Phys. 19, 1647 (1980).ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. M. Langer
    • 1
  1. 1.Institute of PhysicsPolish Academy of SciencesWarsawPoland

Personalised recommendations