Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?

  • J. M. Langer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)


The Coulomb interaction between a free carrier and the electrons at a localized center may lead to either impact excitation, or to a reverse effect — the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed. I also comment on limits imposed by the effect on a possible laser action in systems utilizing intra-center radiative transitions in order to achieve laser action.


Free Carrier Depletion Layer Exchange Term Shallow Donor Impact Excitation 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. M. Langer
    • 1
  1. 1.Institute of PhysicsPolish Academy of SciencesWarsawPoland

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