CdS-ZnS Superlattice Electroluminescent Device Prepared by Hot Wall Epitaxy
Insulator-CdS-ZnS Superlattice-Insulator Electroluminescent Devices (ISUPIEL’s) have for the first time been prepared by hot wall epitaxy and the electroluminescence of the photonenergy (2.0–3.0 eV) has been observed at room temperature. The luminances of the devices are 5 and 50 cd/m2 for undoped and doped superlattice cases, respectively.
KeywordsElectroluminescent Device Intense Luminescence Deep Level Defect Excited Carrier Insulate Layer Thickness
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