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CdS-ZnS Superlattice Electroluminescent Device Prepared by Hot Wall Epitaxy

  • H. Fujiyasu
  • N. Katayama
  • H. Yang
  • K. Ishino
  • A. Ishida
  • M. Kaneko
  • T. Ohiwa
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Insulator-CdS-ZnS Superlattice-Insulator Electroluminescent Devices (ISUPIEL’s) have for the first time been prepared by hot wall epitaxy and the electroluminescence of the photonenergy (2.0–3.0 eV) has been observed at room temperature. The luminances of the devices are 5 and 50 cd/m2 for undoped and doped superlattice cases, respectively.

Keywords

Electroluminescent Device Intense Luminescence Deep Level Defect Excited Carrier Insulate Layer Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Fujiyasu
    • 1
  • N. Katayama
    • 1
  • H. Yang
    • 1
  • K. Ishino
    • 1
  • A. Ishida
    • 1
  • M. Kaneko
    • 2
  • T. Ohiwa
    • 3
  1. 1.Department of Electronics, Faculty of EngineeringShizuoka UniversityHamamatsu 432Japan
  2. 2.Research Lab.Koito Manufacturing Co., Ltd.Shimizu 450Japan
  3. 3.Technical Research Lab.Hitachi Maxcell Ltd.Ibaraki 567Japan

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