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Novel Step Impact Electroluminescent Devices

  • H. J. Lozykowski
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

The optical properties of rare earth ions in solids have been of interest for many years. However, the luminescence properties of 4f ions in III–V semiconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].

Keywords

Excitation Function Luminescence Center Electron Energy Distribution Function Impact Excitation Transition Metal Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. J. Lozykowski
    • 1
  1. 1.College of Engineering and Technology, Department of Electrical and Computer Engineering, Stocker CenterOhio UniversityAthensUSA

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