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Band Tailing in Polycrystalline and Disordered Silicon

  • J. H. Werner
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

The energy distribution of electronic defects at silicon grain boundaries is discussed. Experimentally detected tail states at bicrystal boundaries as well as at grain boundaries in fine-grained films are compared to the energy distribution of band gap states at the SiO2/Si-interface and in amorphous Si. It is speculated that band tails in disordered Si generally arise from short wavelength potential fluctuations due to spatial disorder; these quantum well fluctuations localize free carriers. The experimentally found asymmetry in the density of states (DOS) for tails at grain boundaries, SiO2/Si-interfaces and amorphous Si is ascribed to the different masses of localized electrons and holes and to stronger potential fluctuations at the valence band edge due to dihedral disorder.

Keywords

Valence Band Band Edge Amorphous Silicon Conduction Band Edge Valence Band Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. H. Werner
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgartFed. Rep. of Germany

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