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Crystallization Processes and Structures of Semiconductor Films

  • L. N. Aleksandrov
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

This paper reviews the growth and regrowth of thin films. Special emphasis is placed on the influence of parameters of pulse heating on the crystallographic structure of regrown silicon. Experimental data are accompanied by numerical simulations of nucleation processes, structural changes, point defect formation and doping under pulse heating. The whole sequence from remelting to recrystallization is discussed.

Keywords

Film Growth Silicon Layer Gallium Arsenide Liquid Phase Epitaxy Amorphous Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • L. N. Aleksandrov
    • 1
  1. 1.Institute of Semiconductor PhysicsSiberian Branch of the USSR Academy of SciencesNovosibirskUSSR

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