Advertisement

Sensorik pp 62-94 | Cite as

Magnetische Effekte

Chapter
  • 285 Downloads
Part of the Halbleiter-Elektronik book series (HALBLEITER, volume 17)

Zusammenfassung

Das magnetische Feld der Erde dient gewissen Tieren zur Orientierung und wird von ihren Sinnesorganen wahrgenommen. Der Mensch behilft sich Scit 4000 Jahren mit dem Kompass, dem wohl ältesten sensorartigen Instrument. Moderne mikroelektronische Magnetfeldsensoren auf Siliziumbasis sind zu Millionen als Positions- und Stromdetektoren im Einsatz. Die Einleitung zu diesem Kapitel bietet eine erste Übersicht der Anwendungen, Feldstärkebereiche, Spezifikationen, physikalischen Effekte, Materialien und Technologien der auf magnetischen Phänomenen beruhenden Sensoren und ihrer Literatur.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literatur zu Kapitel 4

  1. 4.1
    Baltes, H.; Popovi C., R. S.; Integrated semiconductor magnetic field sensors. Proc. IEEE 74 (1986) 1107–1132.CrossRefGoogle Scholar
  2. 4.2
    Popovi C., R. S.: Hall-effect devices. Sensors and Actuators 17 (1989) 39–53.CrossRefGoogle Scholar
  3. 4.3
    Kordi C., S.: Integrated silicon magnetic-field sensors. Sensors and Actuators 10 (1986) 347–378.CrossRefGoogle Scholar
  4. 4.4
    Middelhoek, S.; Audet, S. A.: Silicon Sensors. London: Academic Press 1989. Chapter 5: Silicon sensors for magnetic signals, pp. 201–247.Google Scholar
  5. 4.5
    Baltes, H.; Nathan, A.: Integrated magnetic sensors. In: Sensors 1: Fundamentals, Eds. Grandke, T.; Ko, W. Weinheim: VCH Verlagsgesellschaft 1989, Chapter 7, pp. 195–215.Google Scholar
  6. 4.6
    Baltes, H.; Nathan, A.: Sensor modeling. In: Sensors 1: Fundamentals, Eds. Grandke, T.; Ko, W. Weinheim: VCH Verlagsgesellschaft 1989, Chapter 3, pp. 45–77.Google Scholar
  7. 4.7
    Nakamura, T.; Maenaka, K.: Integrated magnetic sensors. Sensors and Actuators A 21-A 23 (1990) 762–769.Google Scholar
  8. 4.8
    Boll, K.; Overshott, K. J. (Eds.): Sensors 5: Magnetic Sensors. Weinheim: VCH Verlagsgesellschaft 1989.Google Scholar
  9. 4.9
    Popovi C., R. S.; Heidenreich, W.: Magnetogalvanic sensors. Ref. [4.8], Chapter 3, pp. 43–96.Google Scholar
  10. 4.10
    Hinz, G.; Voigt, H.: Magnetoelastic sensors. Ref. [4.8], Chapter 4, pp. 97–152.Google Scholar
  11. 4.11
    Bornhöft, W.; Trenkler, G.: Magnetic field sensors: flux gate sensors. Ref. [4.8], Chapter 5, pp. 153–203.Google Scholar
  12. 4.12
    Dehmel, G.: Magnetic field sensors: induction coil (search coil) sensors. Ref. [4.8], Chapter 6, pp. 205–235.Google Scholar
  13. 4.13
    Decker, W.; Kostka, P.: Inductive and eddy current sensors. Ref. [4.8], Chapter 7, pp. 255–313.Google Scholar
  14. 4.14
    Rauscher, G.; Radeloff, Ch.: Wiegand and pulse-wire sensors. Ref. [4.8], Chapter 8, pp. 315–339.Google Scholar
  15. 4.15
    Dibbern, U.: Magneto-resistive sensors. Ref. [4.8], Chapter 9, pp. 341–380.Google Scholar
  16. 4.16
    Koch, H.: SQUID sensors. Ref. [4.8], Chapter 10, pp. 381–445.Google Scholar
  17. 4.17
    Bosch, G.: A Hall device in an integrated circuit. Solid-State Electronics 11 (1968) 712–714.CrossRefGoogle Scholar
  18. 4.18
    Heywang, W.; Pötzl, H. W.: Bänderstruktur und Stromtransport, 2. Auflage. Berlin: Springer 1991 (Halbleiter-Elektronik, Band 3), Abschn. 4.CrossRefGoogle Scholar
  19. 4.19
    Madelung, O.: Halbleiter. In: Handbuch der Physik XX: Elektrische Leitungsphänomene II, Herausg. Flügge, S. Berlin: Springer 1957, pp. 1–245.CrossRefGoogle Scholar
  20. 4.20
    Sugiyama, Y.; Taguchi, T.; Tacano, M.: Highly-sensitive magnetic sensor made of AlGaAs/GaAs heterojunction semiconductors. Proc. 6th Sensor Symposium. Tokyo: IEE Japan 1986, pp. 55–60.Google Scholar
  21. 4.21
    Nathan, A.; Baltes, H.: How to achieve nanotesla resolution with integrated silicon magnetotransistors. IEDM, Washington DC, 3–6 Dec. 1989, Technical Digest. New York: IEEE 1989, pp. 511–514.Google Scholar
  22. 4.22
    Maupin, J. T.; Geske, M. L.: The Hall effect in silicon circuits. In: The Hall Effect and its Applications, ed. by Chien, C. L., Westgate, C. R. New York: Plenum Press 1980, pp. 421–445.Google Scholar
  23. 4.23
    Sugiyama, Y.: Fundamental research on Hall effects in inhomogeneous magnetic fields. Res. Electrotechn. Lab. (Jpn) 838 (1983) 1–146.Google Scholar
  24. 4.24
    Kanayama, T.; Hiroshima, H.; Komura, M.: A quarter-micron Hall sensor fabricated with maskless ion implantation. J. Vacuum Sci. Technol. 136 (1988) 1010–1013.Google Scholar
  25. 4.25
    Hara, T. T.; Mihara, M.; Toyoda, N.; Zama, M.: Highly linear GaAs Hall devices fabricated by ion implantation. IEEE Trans. Electron Devices ED-29 (1982) 78–82.CrossRefGoogle Scholar
  26. 4.26
    Nathan, A.; Maenaka, K.; Allegretto, W.; Baltes, H.; Nakamura, T.: The Hall effect in integrated magnetotransistors. IEEE Trans. Electron Devices ED-36 (1989) 108–117.CrossRefGoogle Scholar
  27. 4.27
    Weiss, H.: Physik und Anwendung galvanomagnetischer Bauelemente. Braunschweig: Vieweg 1969.Google Scholar
  28. 4.28
    Lipmann, H.; Kuhrt, F.: Hallgeneratoren. Berlin: Springer 1968.Google Scholar
  29. 4.29
    Kataoka, S.: Recent development of magnetoresistive devices and applications. Circulars Electrotechn. Lab. 182 (1974) 1–52.Google Scholar
  30. 4.30
    Seitz, T.: Flux gate sensor in planar microtechnology. Sensors and Actuators A21–A23 (1990) 799–802.Google Scholar
  31. 4.31
    Riccobene, C.; Wachutka, G.; Bürgler, J.; Baltes, H.: Two-dimensional numerical modeling of dual-collector magnetotransistors: evidence for emitter efficiency modulation. Sensors and Actuators A31 (1992) 210–214.Google Scholar
  32. 4.32
    Hirata, M.; Suzuki, S.: Integrated magnetic sensor. Proc. 1st Sensor Symposium. Tokyo: IEE Japan 1982, pp. 37–40.Google Scholar
  33. 4.33
    Popovi C., R. S.: Hall Effect Devices. Bristol: Adam Hilger 1991.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

There are no affiliations available

Personalised recommendations