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Profiles of Implanted or Diffuses Dopants (Be, Zn, Cr, Se) in Indium Phosphide

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Secondary Ion Mass Spectrometry SIMS III

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 19))

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Abstract

Indium phosphide is of technological interest since it has been shown that optical fiber communications systems in the 1.1–1.6 µm range could be based on the InP/InGaAsP material. It is of primary importance to develop appropriate device fabricating techniques both for InP itself and alloys grown on it. The paper to be presented is concerned with the SIMS technique applied to the determination of some dopant profiles, i.e. Be, Zn as p-type, Se as n-type and Cr in semi-insulating substrates.

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Author information

Authors and Affiliations

  1. LAB.ICM/MPA — CNET, F-22301, Lannion, France

    M. Gauneau, A. Rupert & P. N. Favennec

Authors
  1. M. Gauneau
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  2. A. Rupert
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  3. P. N. Favennec
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Münster, D-4400, Münster, Fed. Rep. of Germany

    A. Benninghoven

  2. Physical Institute of the Technical University, H-1111, Budapest, Hungary

    J. Giber  & J. László  & 

  3. Department of Physical Chemistry and Radiology, Eötvös University, H-1111, Budapest, Hungary

    M. Riedel

  4. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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© 1982 Springer-Verlag Berlin Heidelberg

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Gauneau, M., Rupert, A., Favennec, P.N. (1982). Profiles of Implanted or Diffuses Dopants (Be, Zn, Cr, Se) in Indium Phosphide. In: Benninghoven, A., Giber, J., László, J., Riedel, M., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS III. Springer Series in Chemical Physics, vol 19. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-88152-7_52

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  • DOI: https://doi.org/10.1007/978-3-642-88152-7_52

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-88154-1

  • Online ISBN: 978-3-642-88152-7

  • eBook Packages: Springer Book Archive

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