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Quantitative Distribution Analysis of B, As and P in Si for Process Simulation

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Secondary Ion Mass Spectrometry SIMS III

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 19))

Abstract

For the development and improvement of process simulation accurate information about the (depth) distribution of dopant elements (electrically active fraction and total elemental concentration) as a function of process parameters has to be obtained. The analytical requirements for distribution analysis as applied for process simulation are stringent:

  1. i)

    high precision and accuracy

  2. ii)

    high detection power and large dynamic rage (concentra-tion range of interest: 1014–5·1021 at/cm3)

  3. iii)

    high depth resolution (shallow p/n-structures in modern devices)

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References

  1. E. Guerrero, G. Dobolka and A. Baghai, Thin Solid Films 76, 237 (1981)

    Article  ADS  Google Scholar 

  2. H. Ryssel and I. Ruge, “Ionenimplantation”, Teubner, Stuttgart, 1978

    Google Scholar 

  3. T.W. Sigmon, in Secondary Ion Mass Spectrometry SIMS-II, ed. by C.A. Benninghoven, C.A. Evans, R.A. Powell, R. Shimizu, H.A. Storms, Springer Series in Chemical Physics, Vol. 9 ( Springer, Berlin, Heidelberg, New York 1979 )

    Google Scholar 

  4. H.W. Werner, Mikrochim. Acta, Suppl. 8, 25 (1975)

    Google Scholar 

  5. E. Zinner, Scanning 3, 57 (1980)

    Article  Google Scholar 

  6. R.E. Honig, Thin Solid Films 31, 89 (1976)

    Article  ADS  Google Scholar 

  7. C.A. Evans, R.J. Blattner, Ann. Rev. Mater. Sci. 8, 181 (1978)

    Article  ADS  Google Scholar 

  8. M. Grasserbauer, G. Stingeder, E. Guerrero and F. Fallmann, Mikrochim. Acta (in press)

    Google Scholar 

  9. H.N. Migeon, private communication

    Google Scholar 

  10. C.R. Helms, J. Rouse, R.W. Barton and S.A. Schwarz, Integrated Circuits Laboratory, Stanford Electronics Laboratories, Report 15. Feb. 1980, p. 246

    Google Scholar 

  11. K. Wittmaack, Appl. Phys. Lett. 29, 552 (1976)

    Article  ADS  Google Scholar 

  12. P. Williams and C.A. Evans, Appl. Phys. Lett. 30, 559 (1977)

    Article  ADS  Google Scholar 

  13. C.W. Magee, J. Electrochem. Soc. 126, 660 (1979)

    Article  Google Scholar 

  14. P. Williams, R.K. Lewis, C.A. Evans and P.R. Hanley, Anal. Chem. 49, 1399 (1977)

    Article  Google Scholar 

  15. D.P. Leta and G.H. Morrison, Anal. Chem. 52, 514 (1980)

    Article  Google Scholar 

  16. E. Zinner, private communication

    Google Scholar 

  17. D.A. Antonaidis, S.E. Hansen and R.W. Dutton, Integrated Circuits Laboratory, Stanford Electronics Laboratories, Computer Program - SUPREM II-05

    Google Scholar 

  18. R. Tielert, IEEE Trans. on Electron Devices ED-27, 1497 (1980)

    Google Scholar 

  19. D.A. Antoniadis and R.W. Dutton, IEEE Trans. on Electron Devices 26, 490 (1979)

    Article  Google Scholar 

  20. A. Desalvo, R. Galloni, R. Rosa and F. Zignani, J. Appl. Phys. 51, 1994 (1980)

    Google Scholar 

  21. E. Guerrero, H. Pötzl, R. Tielert, M. Grasserbauer, and G. Stingeder, paper submitted to J. Electrochem. Soc.

    Google Scholar 

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Author information

Authors and Affiliations

  1. Institute for Analytical Chemistry, Technical University Vienna, A - Wien, Austria

    M. Grasserbauer, G. Stingeder, E. Guerrero, H. Pötzl & H. Ryssel

  2. Department of Physical Electronics, Institute of General Electrical Engineering, A - Wien, Austria

    E. Guerrero & H. Pötzl

  3. Electronics, Technical University Vienna, A - Wien, Austria

    E. Guerrero & H. Pötzl

  4. Solid State Physics, LudwigBolzmann-Institute, A - Wien, Austria

    E. Guerrero & H. Pötzl

  5. Siemens AG, Central Research Laboratories, D-8000, München, Fed. Rep. of Germany

    R. Tielert

  6. Institute for Solid State Technology, Fraunhofer Gesellschaft, D-8000, München, Fed. Rep. of Germany

    H. Ryssel

Authors
  1. M. Grasserbauer
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  2. G. Stingeder
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  3. E. Guerrero
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  4. H. Pötzl
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  5. R. Tielert
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  6. H. Ryssel
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Münster, D-4400, Münster, Fed. Rep. of Germany

    A. Benninghoven

  2. Physical Institute of the Technical University, H-1111, Budapest, Hungary

    J. Giber  & J. László  & 

  3. Department of Physical Chemistry and Radiology, Eötvös University, H-1111, Budapest, Hungary

    M. Riedel

  4. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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© 1982 Springer-Verlag Berlin Heidelberg

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Grasserbauer, M., Stingeder, G., Guerrero, E., Pötzl, H., Tielert, R., Ryssel, H. (1982). Quantitative Distribution Analysis of B, As and P in Si for Process Simulation. In: Benninghoven, A., Giber, J., László, J., Riedel, M., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS III. Springer Series in Chemical Physics, vol 19. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-88152-7_49

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  • DOI: https://doi.org/10.1007/978-3-642-88152-7_49

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-88154-1

  • Online ISBN: 978-3-642-88152-7

  • eBook Packages: Springer Book Archive

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