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Impurity Redistribution in GaAS Epilayers

  • A. M. Huber
  • G. Morillot
  • P. Merenda
  • M. Bonnet
  • G. Bessonneau
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Abstract

It is generally recognised that secondary ion mass spectrometry (SIMS) is one of the most powerful characterization techniques available in the electronics industry. Several problems have been solved thanks to SIMS techniques. In particular it contributes to the improvement of the expensive and difficult preparation and treatment of gallium arsenide, one of the basic materials of new semiconductor technology [1–6].

Keywords

Field Effect Transistor Gallium Arsenide Deep Acceptor Level Chloride Process GaAs Epilayers 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • A. M. Huber
    • 1
  • G. Morillot
    • 1
  • P. Merenda
    • 1
    • 2
  • M. Bonnet
    • 1
  • G. Bessonneau
    • 1
    • 2
  1. 1.THOMSON-CSF - L.C.R.OrsayFrance
  2. 2.THOMSON-CSF - D.C.M.OrsayFrance

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