Impurity Redistribution in GaAS Epilayers

  • A. M. Huber
  • G. Morillot
  • P. Merenda
  • M. Bonnet
  • G. Bessonneau
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)


It is generally recognised that secondary ion mass spectrometry (SIMS) is one of the most powerful characterization techniques available in the electronics industry. Several problems have been solved thanks to SIMS techniques. In particular it contributes to the improvement of the expensive and difficult preparation and treatment of gallium arsenide, one of the basic materials of new semiconductor technology [1–6].


Field Effect Transistor Gallium Arsenide Deep Acceptor Level Chloride Process GaAs Epilayers 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    A.M. Huber, G. Morillot, N.T. Linh, P.N. Favennec, B. Deveaud and B. Toulouse, Appl. Phys. Lett. 34, 858 (1979)ADSCrossRefGoogle Scholar
  2. 2.
    C.A. Evans, Jr., V.R. Define, T.W. Sigmond and A. Lidow, Appl. Phys. Lett. 35, 291 (1979)Google Scholar
  3. 3.
    J. Kasahara and N. Watanabe, Jpn J. Appl. Phys. 19, L151 (1980)ADSCrossRefGoogle Scholar
  4. 4.
    P.K. Vasudev and R.G. Wilson, Appl. Phys. Lett. 37, 308 (1980)ADSCrossRefGoogle Scholar
  5. 5.
    M.H. Badawi, B.J. Sealy and J.B. Clegg, Electron Lett. 16, 554 (1980)CrossRefGoogle Scholar
  6. 6.
    R.D. Fairman, R.T. Chen, J.R. Olive and D.R. Ch’en, IEE Trans. Electron. Devices vol. ED-28 135 (1981)Google Scholar
  7. 7.
    A.M. Huber, G. Morillot, P. Merenda, N.T. Linh, in Secondary Ion Mass Spectrometry SIMS-II, ed. by A. Benninghoven, C.A. Evans, Jr., R.A. Powell, R. Shimizu, H.A. Storms, Springer Series in Chemical Physics, Vol. 9 ( Springer, Berlin, Heidelberg, New York 1979 ) pp. 91–94Google Scholar
  8. 8.
    R.G. Wilson, P.K. Vasudev, D.M. Jamba, C.A. Evans, Jr., and V.R. Define, Appl. Phys. Lett. 36, 215 (1980)Google Scholar
  9. 9.
    J.R. Knight, D. Effer and P.R. Evans, Solid-State Electron 8, 178 (1965)ADSCrossRefGoogle Scholar
  10. 10.
    L. Hollan, Acta Electronica 21, 117 (1978)Google Scholar
  11. 11.
    S.J. Bass, J. Cryst. Growth, 31, 172 (1978)ADSCrossRefGoogle Scholar
  12. 12.
    J.P. Duchemin, J. Vac. Sci. Technol. 18 (3) 753 (1981)ADSGoogle Scholar
  13. 13.
    Rajaram Bhat and Sorab K. Ghandi, J. Electrochem. Soc. 125, 771 (1978)CrossRefGoogle Scholar
  14. 14.
    M. Bonnet, N. Visentin, G. Bessonneau and J.P. Duchemin, Conference AJACCIO (1981) to be published in J. Cryst. Growth (1981)Google Scholar
  15. 15.
    A.M. Huber, G. Morillot, P. Merenda, J. Perrocheau, J.L. Debrun, M. Valladon and D. Koemmerer, in“Gallium Arsenide and Related Compounds°(Vienna) 56, 579 (1980)Google Scholar
  16. 16.
    P.B. Klein, P.E.R. Nordquist and P.F. Siebenmann, J. Appl. Phys. 51, 4861 (1980)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • A. M. Huber
    • 1
  • G. Morillot
    • 1
  • P. Merenda
    • 1
    • 2
  • M. Bonnet
    • 1
  • G. Bessonneau
    • 1
    • 2
  1. 1.THOMSON-CSF - L.C.R.OrsayFrance
  2. 2.THOMSON-CSF - D.C.M.OrsayFrance

Personalised recommendations