Depth Resolution of Ion Bombardment Technique Applied to NiPd, NiPt, PtPd, Thin Layer Systems

Abstract

A lot of studies have been published already about the important questions in depth profiling: how the ion bombardment process itself can influence the accuracy of the measured depth profile, what depth resolution can be reached in an optical case, which parameters play a significant role in the profile measurement and how to get the real concentration profile from the measured one [1–4]. As the accuracy and reliability of SIMS measurements have to be subjects of both theoretical and experimental studies, one must examine depth profiles with respect to:

• a.) different layer producing techniques

• b.) material, and

• c.) sputtering rate dependence.