Picosecond, 1.06 Micron Laser-Induced Amorphous Phases in Thin, Single Crystal Silicon Membranes
Recent reports of laser-induced amorphous phases in crystalline silicon due to picosecond 532nm and 266nm radiation  and nanosecond 266nm radiation  raise questions regarding the dynamics of such a transition. These results may not be adequately described by equilibrium heat-flow analysis for several reasons.
KeywordsBlack Body Radiation Small Ridge 266nm Radiation Laser Beam Profile Optical Absorption Transient
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- 7.This research was supported by the DoD Joint Services Electronics Program through the AFOSR contract F49620–77-C-0101.Google Scholar