Abstract
Interest in semiconductor picosecond devices has been stimulated by recent reports of ultrashort pulse generation by modelocking in GaAℓAs diode devices [1–3]. The transferability of this technique to longer wavelengths, where such pulses can be transmitted over long distances in optical fibers [4], has also been demonstrated [5]. Here we describe the generation of what we believe to be the shortest pulses to date with a semiconductor diode device. These results were achieved with a passively modelocked system consisting of a modified strip buried heterostructure (MSBH) GaAℓAs diode [6] with an external lens and mirror. It is especially important to note that this scheme allows us to generate pulses which are shorter in duration than a transit time of the diode laser itself.
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Ippen, E.P., Eilenberger, D.J., Dixon, R.W. (1980). Picosecond Pulse Generation with Diode Lasers. In: Shank, C.V., Hochstrasser, R., Kaiser, W. (eds) Picosecond Phenomena II. Springer Series in Chemical Physics, vol 14. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87861-9_5
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DOI: https://doi.org/10.1007/978-3-642-87861-9_5
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