An Accurate Noise Analysis in MESFET Including Hot Carrier Effects

  • J. Graffeuil
  • JF. Sautereau
  • G. Blasquez
  • P. Rossel
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)


Some attemps have been made to apply van der Ziel’s earlier noise calculations in silicon J. FET to GaAs Schottky barrier FET. These revealed that the calculated noise levels were of an order of magnitude lower than the measured ones. This discrepancy has been attributed to such excess noise sources as intervalley scattering noise [1] or diffusion noise in the velocity saturated pinch-off region [2]. Consequently, van der Ziel’s noise sources (gate, drain and correlation) were correctly modified to include these new phenomena, and results have been reported which agree satisfactorily with experiments [1],[2],[5]. However, up to the time of writing, no experimental evidence proving the existence of these noise sources have been offered. Our aim in this paper is to demonstrate that normal noise sources can satisfactorily agree with experiments as long as they are properly calculated for high frequency conditions, and as long as some specific properties of gallium arsenide, i.e. field dependent mobility and field dependent electron noise temperature, are included. Finally, this new noise model, which we introduce, can be used for theoretical computer aided design of low noise devices.


Noise Source Gallium Arsenide Noise Figure Noise Temperature Epilayer Thickness 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • J. Graffeuil
    • 1
    • 2
  • JF. Sautereau
    • 1
    • 2
  • G. Blasquez
    • 1
  • P. Rossel
    • 1
  1. 1.Laboratoire d’Automatique et d’Analyse des SystèmesCentre National de la Recherche ScientifiqueToulouseFrance
  2. 2.Université Paul Sabatier de ToulouseToulouseFrance

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