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1/f-Noise in Indium Antimonide

  • J. Šikula
  • B. Koktavý
  • P. Vašina
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)

Abstract

In the present paper we deal with the 1/f noise in samples of inhomogeneous single-crystal and polycrystaline indium antimonide. The theory of HOOGE [1] gives the well known relation for the spectral density Si of the current noise:
$$ S_i = \frac{{a_o I^2 }} {{fn}} $$
(1)
The HOOGE’s parameter αo is considered to be constant for a wide range of conducting and semiconducting materials and independent of temperature. The value of αo as given by HOOGE is 2 × 10−3. VANDAMME [2] reports for single crystals of InSb the value of αo from 10−3 to 7 × 10−3. From (1) it is evident that thespectral density Si depends only on the total number of carriers N in the sample. HOOGE points out, however, that (1) holds only for homogeneous samples.

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References

  1. 1.
    F.N. Hooge, Phys.Lett. 29 A, 139, (1969)Google Scholar
  2. 2.
    L.K.J. Vandamme, Phys.Lett., 49 A, 233, (1974)Google Scholar
  3. 3.
    L.R. Weisberg, J.Appl.Phys., 33, 1817, (1962)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • J. Šikula
    • 1
  • B. Koktavý
    • 1
  • P. Vašina
    • 1
  1. 1.Department of PhysicsTechnical University of BrnoBrnoCzechoslovakia

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