Abstract
A noise process specific for semiconductors is the generation-recombination noise caused by the statistical generation and recombination of charge carriers. This charge fluctuation causes a great variety of current or voltage fluctuations in different semiconductor devices. It is the task of this paper to link some of these different secundary noise effects with the original charge fluctuation and to compare the generation-recombination noise with thermal- and shot-noise; thus the paper has primarily a tutorial character, trying to explain the physics by as little mathematics as possible. The author chooses the original corpuscular approach [1][2] because he thinks, that this gives a better insight into the physics of the process. The method however is not applicable to all types of recombination mechanism. Reference is therefore made to the more general collective method [3] if necessary.
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Müller, R. (1978). Generation-Recombination Noise. In: Wolf, D. (eds) Noise in Physical Systems. Springer Series in Electrophysics, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87640-0_2
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DOI: https://doi.org/10.1007/978-3-642-87640-0_2
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