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Monte Carlo Calculation of Non-Steady State Hot Electron Noise in Very Short Channel n-Si and n-GaAs Devices

  • J. Zimmermann
  • Y. Leroy
  • A. Kaszynski
  • B. Carnez
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)

Abstract

The aim of this work is to study problems regarding transport and noise phenomena appearing in modelisation of microwave semiconductor devices using silicon or gallium arsenide, in which non steady conditions might have an effect upon the carrier dynamics. In recent years, Monte-Carlo simulation was revealed to be a powerful tool to get the characteristic transport parameters of materials [1, 2]. If such information has been applied to the study of components [3, 4], Monte-Carlo techniques have not been used for a direct simulation of noise in real devices.

Keywords

Velocity Fluctuation Gallium Arsenide Noise Figure Real Device Carrier Dynamic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • J. Zimmermann
    • 1
  • Y. Leroy
    • 1
  • A. Kaszynski
    • 1
  • B. Carnez
    • 1
  1. 1.Centre Hyperfréquences et SemiconducteursUniversité de Lille 1, E.R.A. au CNRS No 454Villeneuve d′AscqFrance

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