Monte Carlo Calculation of Non-Steady State Hot Electron Noise in Very Short Channel n-Si and n-GaAs Devices
The aim of this work is to study problems regarding transport and noise phenomena appearing in modelisation of microwave semiconductor devices using silicon or gallium arsenide, in which non steady conditions might have an effect upon the carrier dynamics. In recent years, Monte-Carlo simulation was revealed to be a powerful tool to get the characteristic transport parameters of materials [1, 2]. If such information has been applied to the study of components [3, 4], Monte-Carlo techniques have not been used for a direct simulation of noise in real devices.
KeywordsMicrowave GaAs Gallium Arsenide
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- 7.J. ZIMMERMANN, Y. LEROY, E. CONSTANT, Accepted in J. Appl. Physics 1978Google Scholar