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Buried K-Fullerides by Ion Implantation

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Electronic Properties of Fullerenes

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 117))

Abstract

We report the formation of buried K-fulleride layers by high dose implantation of 30 keV K+ at different implant temperatures. Raman scattering showed a transformation of fullerene molecules to amorphous carbon (a-C) within the range of the implanted ions. The microscopic structure of the a-C is discussed. At elevated implant temperatures potassium accumulates underneath the a-C layer. This behaviour is explained in terms of the formation process of a K-fulleride. For comparison, results obtained on Ar+ implanted fullerene films are presented.

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Author information

Authors and Affiliations

  1. Institut für Festkörperphysik, Universität Wien, Strudlhofgasse 4, A-1090, Wien, Austria

    J. Kastner & H. Kuzmany

  2. Institut für Experimentalphysik, Johannes Kepler Universität, A-4040, Linz, Austria

    L. Palmetshofer & P. Bauer

  3. Institut für Analytische Chemie, TU Wien, Getreidemarkt 9, A-1060, Wien, Austria

    G. Stingeder

Authors
  1. J. Kastner
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  2. L. Palmetshofer
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  3. P. Bauer
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  4. G. Stingeder
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  5. H. Kuzmany
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Editor information

Editors and Affiliations

  1. Institut für Festkörperphysik, Universität Wien, Strudlhofgasse 4, A-1090, Wien, Austria

    Hans Kuzmany

  2. Kernforschungszentrum Karlsruhe, Institut für Nukleare Festkörperphysik, Postfach 3640, D-76021, Karlsruhe, Germany

    Jörg Fink

  3. Physikalisches Institut II, Universität Stuttgart, Pfaffenwaldring 57, D-70550, Stuttgart, Germany

    Michael Mehring

  4. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany

    Siegmar Roth

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© 1993 Springer-Verlag Berlin Heidelberg

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Kastner, J., Palmetshofer, L., Bauer, P., Stingeder, G., Kuzmany, H. (1993). Buried K-Fullerides by Ion Implantation. In: Kuzmany, H., Fink, J., Mehring, M., Roth, S. (eds) Electronic Properties of Fullerenes. Springer Series in Solid-State Sciences, vol 117. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-85049-3_7

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  • DOI: https://doi.org/10.1007/978-3-642-85049-3_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-85051-6

  • Online ISBN: 978-3-642-85049-3

  • eBook Packages: Springer Book Archive

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