Observation of Quasidiffusive Phonon Propagation in Silicon

  • M. E. Msall
  • M. S. Carroll
  • J. A. Shield
  • J. P. Wolfe
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

Photoexcitation of Si is expected to produce a broad range of phonon frequencies as a byproduct of electronic relaxation. These phonons should propagate through the crystal quasidiffusively.1 In contrast to these expectations, previous experiments on Si immersed in liquid helium observed phonon pulses with no long tail from scattered phonons and sharp phonon caustics.2 These observations imply that the detected phonons are relatively low frequency and propagate ballistically from a region very near the focused laser source. Our experiments attempt to isolate the factors responsible for this discrepancy between expectation and experiment. In particular, we find that the phonon pulses are very sensitive to the presence of liquid helium at the excitation surface and to the excitation level.

Keywords

Helium 

References

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    J.A. Shields and J.P. Wolfe, Z. Phys. B75. 11 (1989).CrossRefGoogle Scholar
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    H.J. Maris, Phys. Rev. B41 9736 (1990).ADSCrossRefGoogle Scholar
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    D.V. Kazakovtsev and Y.B. Levinson, Sov. Phys. JETP 61, 1318 (1985).Google Scholar
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    Electron Hole Droplets in Semiconductors, C.P. Jeffries and L.V. Keldysh, eds. (North Holland, Amsterdam, 1983).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • M. E. Msall
    • 1
  • M. S. Carroll
    • 1
  • J. A. Shield
    • 1
  • J. P. Wolfe
    • 1
  1. 1.Materials Research LaboratoryUniversity of Illinois at Urbana-ChampaignUrbanaUSA

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