Abstract
The spatial distribution of the fluctuations of the tunneling current occurring in a Scanning Tunneling Microscope are investigated. Experiments performed in ultra high vacuum on a cleaved (110) surface of GaAs reveal a noise pattern with a commensurate structure of atomic dimensions. The maxima in the noise distribution are located near the Ga-atoms while the maxima in the topography are located either near the Ga- or the As-atoms depending on the polarity of the applied bias. Due to the buckling relaxation of the surface the Ga-atoms have an almost planar coordination resulting in a large vibrational amplitude. The enhanced current noise at the position of the Ga-atoms appears to be associated to fluctuations of the occupation number of a specific librational surface phonon.
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© 1993 Springer-Verlag Berlin Heidelberg
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Möller, R., Koslowski, B., Baur, C., Dransfeld, K. (1993). Noise in Scanning Tunneling Microscopy and Surface Phonons. In: Meissner, M., Pohl, R.O. (eds) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences, vol 112. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84888-9_174
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DOI: https://doi.org/10.1007/978-3-642-84888-9_174
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