MBE-Growth and Device Applications of Modulation-Doped Si/SiGe Heterostructures

  • F. Schäffler
  • U. König
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 111)


An overview of the recent development of modulation doping in the Si/SiGe heterosystem is given. The strain-dependent band ordering at the Si/SiGe interface requires both the growth of strain relaxed buffer layers and of pseudomorphic Si and SiGe layers. Special emphasis is put on the recent breakthrough concerning the material quality of strain-relaxed SiGe buffer layers by introducing a Ge grading. Device applications are discussed in terms of modulation-doped field effect transistors (MODFET). Device implementations with transconductance values comparable to those of III-V MODFETs are presented. A concept for the realization of complimentary MODFETs is discussed.


Misfit Dislocation Very Large Scale Integration SiGe Layer Thread Dislocation Density Modulation Doping 
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  1. 1.
    L. Esaki and R. Tsu, Internal Report No. RC2418, IBM Research, March 26, 1969Google Scholar
  2. 2.
    H. Jorke and H.-J. Herzog, Proc. 1st Int. Symp. Si Molecular Beam Epitaxy, (J.C.Bean, ed.), Proc. Vol. 85–7, Electrochemical Society, Pennington, New Jersy 1985, p. 352Google Scholar
  3. 3.
    G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, and H.-J. Herzog, Phys. Rev. Lett. 54, 2441 (1985)CrossRefGoogle Scholar
  4. 4.
    C.G. Van de Walle and R.M. Martin, Phys. Rev. B34, 5621 (1986)CrossRefGoogle Scholar
  5. 5.
    The seeming alternative of using SiGe substrates is not of any technical relevance because of the lacking compatibility with Si VLSI technologyGoogle Scholar
  6. 6.
    see e.g. E. Kasper and F. Schäffler in Strained Layer Superlattices, Semiconductors and Semimetals Vol. 32, T. Pearsall (volume editor.), Academic Press, Boston 1990, chapter 4Google Scholar
  7. 7.
    H. Jorke, H. Kibbel, F. Schäffler, and H.-J. Herzog, Thin Solid Films 183, 307 (1989)CrossRefGoogle Scholar
  8. 8.
    E. Kasper, H. Kibbel, and F. Schäffler, J. Electrochem. Soc. 136, 1154 (1989)CrossRefGoogle Scholar
  9. 9.
    V. Higgs, E.C. Lightowlers, G. Davis, F. Schäffler and E. Kasper, Semicond. Sci. Technol. 4, 593 (1989)CrossRefGoogle Scholar
  10. 10.
    M. Wachter, K. Thonke, R. Sauer, H.-J. Herzog, F. Schäffler and E. Kasper, to be publishedGoogle Scholar
  11. 11.
    H. Jorke and H. Kibbel, Proc. 14 Int. Conf. Si Molecular Beam Epitaxy, Proc. Vol. 85–7, Electrochem. Soc., Pennington, New Jersy 1985, p. 194Google Scholar
  12. 12.
    H. Daembkes, H.-J. Herzog, H. Jorke, H. Kibbel, and E. Kasper, IEEE Trans. ED-33, 633 (1986)Google Scholar
  13. 13.
    E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.J. Mii, and B.E. Weir, Appl. Phys. Lett. 59, 811 (1991).CrossRefGoogle Scholar
  14. Y.J. Mii, Y.-H. Xie, E.A. Fitzgerald, D. Monroe, F.A. Thiel, B.E. Weir, and L.C. Feldman, Appl. Phys. Lett. 59, 1611 (1991)CrossRefGoogle Scholar
  15. 14.
    F.K. Le Goues, B.S. Meyerson, and J.F. Morar, Phys. Rev. Lett. 66, 2903 (1991)CrossRefGoogle Scholar
  16. 15.
    F. Schäffler, D. Tóbben. H.-J. Herzog, G. Abstreiter and B. Holländer, Semicond. Sci. Technol. 7, 260 (1992)CrossRefGoogle Scholar
  17. 16.
    G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, and E. Gomik, Appl. Phys. Lett. 59, 3318 (1991)CrossRefGoogle Scholar
  18. 17.
    I.V. Kukushkin and V.B. Timofeev, Soy. Phys. JETP 67, 594 (1988)Google Scholar
  19. 18.
    U. Kónig, A.J. Boers, F. Schäffler and E. Kasper, Electronics Lett. 28, 160 (1992)CrossRefGoogle Scholar
  20. 19.
    U. Kbnig and F. Schäffler, Electronics Lett. 27, 1405 (1991)CrossRefGoogle Scholar
  21. 20.
    F. Schäffler and H. Jorke, Appl. Phys. Lett. 58, 397 (1991)CrossRefGoogle Scholar
  22. 21.
    R. People, J.C. Bean, and D.V. Lang, J. Vac. Sci. Technol. A3, 846 (1985)Google Scholar
  23. 22.
    E. Murakami, H. Etoh, K. Nakagawa, A. Nishida, and M. Miyao, Electron. Device Lett. EDL-12, 71 (1991).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • F. Schäffler
    • 1
  • U. König
    • 1
  1. 1.Forschungsinstitut UlmDaimler-Benz AGUlmFed. Rep. of Germany

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