MBE-Growth and Device Applications of Modulation-Doped Si/SiGe Heterostructures

  • F. Schäffler
  • U. König
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 111)

Abstract

An overview of the recent development of modulation doping in the Si/SiGe heterosystem is given. The strain-dependent band ordering at the Si/SiGe interface requires both the growth of strain relaxed buffer layers and of pseudomorphic Si and SiGe layers. Special emphasis is put on the recent breakthrough concerning the material quality of strain-relaxed SiGe buffer layers by introducing a Ge grading. Device applications are discussed in terms of modulation-doped field effect transistors (MODFET). Device implementations with transconductance values comparable to those of III-V MODFETs are presented. A concept for the realization of complimentary MODFETs is discussed.

Keywords

GaAs Prepar 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • F. Schäffler
    • 1
  • U. König
    • 1
  1. 1.Forschungsinstitut UlmDaimler-Benz AGUlmFed. Rep. of Germany

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