Abstract
The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 10nm in effective width, are formed at the bottom of channels etched into the substrate prior to epitaxy. The wires exhibit high luminescence efficiency and carrier lifetimes comparable to those measured in quantum wells (QWLs) owing to their in situ formation, which minimizes interface defects. Quasi-one dimensional subbands are observed in photoluminescence (PL), PL excitation and amplified spontaneous emission spectra of these QWRs. PL and time-resolved cathodoluminescence studies reveal efficient carrier capture into the QWRs via QWL layers connected to the wires. Application of these structures in efficient QWR lasers is also discussed.
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Kapon, E. et al. (1992). Optical Properties of Quantum Wires Grown on Nonplanar Substrates. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Low-Dimensional Electronic Systems. Springer Series in Solid-State Sciences, vol 111. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84857-5_30
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DOI: https://doi.org/10.1007/978-3-642-84857-5_30
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