Characterization of Ge and C Implanted Si Diodes
Electrical characterization of diodes formed by Ge and C implantations in Si was performed. The results were compared with those obtained for a corresponding Si control device. Current-voltage measurements confirm that carbon doping improves the crystalline quality of the Ge-implanted SiGe layer. However, capacitance-voltage measurements indicate that carbon implantation causes significant dopant deactivation.
KeywordsForward Bias SiGe Layer Heterojunction Bipolar Transistor Boron Doping Carbon Doping
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