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Characterization of Ge and C Implanted Si Diodes

  • C. Cook
  • A. Gupta
  • C. Y. Yang
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Electrical characterization of diodes formed by Ge and C implantations in Si was performed. The results were compared with those obtained for a corresponding Si control device. Current-voltage measurements confirm that carbon doping improves the crystalline quality of the Ge-implanted SiGe layer. However, capacitance-voltage measurements indicate that carbon implantation causes significant dopant deactivation.

Keywords

Forward Bias SiGe Layer Heterojunction Bipolar Transistor Boron Doping Carbon Doping 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • C. Cook
    • 1
  • A. Gupta
    • 1
  • C. Y. Yang
    • 1
  1. 1.Microelectronics LaboratorySanta Clara UniversitySanta ClaraUSA

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