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Simulations of Ge and C Implantations to Form Si1-χGeχ BJT

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Amorphous and Crystalline Silicon Carbide IV

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

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Abstract

Simulations of Ge and C implantations in Si were performed to study bandgap grading in the Si1-χGeχ bipolar junction transistor. It was found that a wide-bandgap emitter and a narrow-bandgap base with no discontinuity and desirable bandgap grading were obtainable with implantation. Hence compared to epitaxially grown heterojunction bipolar transistors, these devices are likely to result in better device reliability.

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References

  1. G.L. Patton, J.H. Comfort, B.S. Meyerson, E.F. Crabbe, G.J. Scilla, E.D. Fresart, J.M.C. Stork, J.Y.-C. Sun, D.L. Harame and J.N. Burghartz., IEEE Elect. Dev. Lett., vol. 11, no. 4, pp. 171 – 173, 1990

    Article  ADS  Google Scholar 

  2. G.L. Patton, J.M.C. Stork, J.H. Comfort, E.F. Crabbe, B.S. Meyerson, D.L. Harame and J.Y.-C. Sun., IEDM Tech. Dig., pp. 13–16 (1990)

    Google Scholar 

  3. D. Fathy, O.W. Holland, and C.W. White., Appl. Phys. Lett., vol. 51, no. 17, pp. 1337–1339 (1987)

    Article  ADS  Google Scholar 

  4. B.T. Chilton, B.J. Robinson, D.A. Thompson, T.E. Jackman, and J.-M. Baribeau., Appl. Phys. Lett., vol. 54, no. 1, pp. 42–44, 1989

    Article  ADS  Google Scholar 

  5. D.C. Paine, D.J. Howard, N.G. Stoffel, and J.A. Horton., J. Mater. Res., vol. 5, no. 5, pp. 1023–1031, 1990

    Article  ADS  Google Scholar 

  6. R.R. Hart, R.G. Hunsperger, H.L. Dunlap, and O.J. Marsh., Nucl. Instrum. Methods, vol. 190, pp. 70–74, 1981

    Google Scholar 

  7. A. Fukami, K. Shoji, T. Nagano and C.Y. Yang., Appl. Phys. Lett., vol. 57, no. 22, pp. 2345 – 2347, 1990.

    Article  ADS  Google Scholar 

  8. A. Gupta, J. W. Waters, C. Cook, C.Y. Yang, A. Fukami, K. Shoji, and T. Nagano, MRS Symposium on Silicon MBE, Spring 1991, in press

    Google Scholar 

  9. K. Shoji, A. Fukami, T. Nagano, T. Tokuyama, and C.Y. Yang., presented at ESSDERC ’91, Switzerland

    Google Scholar 

  10. Y.T. Lee, N. Miyamoto and J. Nishizawa., J. Electrochem. Soc.: Solid-State Sci. and Tech., vol. 122, no. 4, pp. 530, 1975

    Google Scholar 

  11. S.N. Bunker and A.J. Armini, Nucl. Instrum. Methods Phys. Res., vol. B39, no. 1–4, pp. 7–10, 1989

    Article  ADS  Google Scholar 

  12. J.F. Gibbons, W.S. Johnson and S.W. Mylroie., Projected Range Statistics: Semiconductors and Related Materials, Dowden, Hutchinson and Ross, Stroudsburg (1975)

    Google Scholar 

  13. J.P. Biersack., The Calculation of Ion Ranges in Solids with Analytic Solutions, in “Ion Implantation Techniques”, ibid

    Google Scholar 

  14. J.F. Ziegler, J.P. Biersack and U. Littmark., The Stopping and Range of Ions in Solids, Vol. I, Pergamon, Oxfoid (1985)

    Google Scholar 

  15. N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita, R. Shimizu and H. Tawara., At. Data and Nucl. Data Tables, Vol. 31, 1984

    Google Scholar 

  16. R. Ghez., Appl. Phys. Lett., vol. 45, pp. 881, 1984.

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, Santa Clara, CA, 95053, USA

    A. Gupta, J. W. Waters, M. M. Rahman & C. Y. Yang

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  1. A. Gupta
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  2. J. W. Waters
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  3. M. M. Rahman
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  4. C. Y. Yang
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Editor information

Editors and Affiliations

  1. Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA

    Cary Y. Yang  & M. Mahmudur Rahman  & 

  2. School of Engineering, Howard University, 20059, Washington, DC, USA

    Gary L. Harris

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© 1992 Springer-Verlag Berlin Heidelberg

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Gupta, A., Waters, J.W., Rahman, M.M., Yang, C.Y. (1992). Simulations of Ge and C Implantations to Form Si1-χGeχ BJT. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_54

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  • DOI: https://doi.org/10.1007/978-3-642-84804-9_54

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84806-3

  • Online ISBN: 978-3-642-84804-9

  • eBook Packages: Springer Book Archive

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