Abstract
We report the effect of surface preparation on the Schottky barrier potential for Au deposited on silicon carbide. Through repeated etchings, a profile of the barrier height as a function of distance into the material has been measured. For bulk substrates and sublimation epitaxial layers there is a significant variation in the barrier height near the surface. The final value of the barrier height was determined to be approximately 2eV, or 2/3 of the energy gap of 6H SiC. We believe that the variation in the previously reported values of barrier height (from 1.4 to 2.6 eV), are due to different SiC surface treatments.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Mead, C.A. and Spitzer, W.G. Phys. Rev. v. 134, N 3A, pp. A713–A716
Hagen, S.H. J. of Appi. Phys. v. 39, pp. 1458–1461 (1968)
Wu, S.Y. and Campbell, R.B. Solid State Electron, v. 17, pp. 683–687 (1974)
Verenchikova, R.G., Sankin, V.I., and Radovanova, E.I. Sov. Phys. Semicond. v. 17, pp. 1123–1125 (1983)
This Work.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Dmitriev, V.A., Fekade, K., Spencer, M.G. (1992). Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_51
Download citation
DOI: https://doi.org/10.1007/978-3-642-84804-9_51
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84806-3
Online ISBN: 978-3-642-84804-9
eBook Packages: Springer Book Archive