Abstract
In this study, we report the first measurements of capacitance recovery times in 6H-SiC n-i-p-i-n diodes as a function of temperature, perimeter to area ratio, and pulse voltage, and show how this provides information on generation processes in the material. Two lots of wafers differing primarily in the oxidation conditions relating to the SiO2 passivation are considered. Recovery times at 160 °C are about 100 seconds for lot A and 2.53 hours for lot B. Extensive measurements are reported on lot A, while the long recovery times seen in lot B have made it difficult to analyze these devices.
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© 1992 Springer-Verlag Berlin Heidelberg
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Gardner, C.T., Cooper, J.A., Melloch, M.R., Palmour, J.W., Carter, C.H. (1992). Electrical Characterization of PiN Diode Structures in 6H-SiC. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_49
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DOI: https://doi.org/10.1007/978-3-642-84804-9_49
Publisher Name: Springer, Berlin, Heidelberg
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