Abstract
Photoluminescence spectra of SiC at 1.9K were investigated. Different polytypes and p- or n-type dopants in the crystals can be determined. Specific lines for N-, Ti- and Al- correlated defects can be observed. The line shape and the intensity ratio of special lines are correlated to the quality of the crystals. After ion implantation a series of characteristic lines for different polytypes are visible.
To obtain a better understanding of the recombination mechanism an external uniaxial stress (up to 3 GPa) was applied to the samples. The different recombination lines show a specific behavior: some of them shift to longer wavelengths, some other to shorter wavelengths and some of them split with an uniaxial stress in [11\(\bar 2\)0]-direction.
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References
W. J.Choyke, L. Patrick, Proc. of the Third Int.Conf. on Silicon Carbide, Miami Beach (1973) p. 261
G. Ziegler etal., IEEE Trans. ED-30, 277 (1983)
S. Karmann etal., Verhandl. DPG (VI) 26, 1156 (1991)
W. v. Münch, J. Electrochem. Soc. 122. 642 (1975)
P. J. Dean etal., Proc. Int. Conf. on Defects … in Semicond., Nice 1978, publ. London 1979, p. 447
C. Haberstroh, to be published
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© 1992 Springer-Verlag Berlin Heidelberg
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Haberstroh, C., Helbig, R., Leibenzeder, S. (1992). Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_33
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DOI: https://doi.org/10.1007/978-3-642-84804-9_33
Publisher Name: Springer, Berlin, Heidelberg
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