Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers
Advances have been made in the understanding of the mechanisms that control polytype formation during the chemical vapor deposition of epitaxial SiC films on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced density of stacking faults. An important aspect of these results was an in situ pregrowth HCl/H2 etch which eliminated unwanted 3C-SiC nucleation.
KeywordsTilt Angle Lateral Growth Chemical Vapor Deposition Growth Small Tilt Angle Diamond Scribe
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