Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers

  • J. A. Powell
  • D. J. Larkin
  • J. B. Petit
  • J. H. Edgar
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Advances have been made in the understanding of the mechanisms that control polytype formation during the chemical vapor deposition of epitaxial SiC films on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced density of stacking faults. An important aspect of these results was an in situ pregrowth HCl/H2 etch which eliminated unwanted 3C-SiC nucleation.

Keywords

Migration Graphite Carbide 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • J. A. Powell
    • 1
  • D. J. Larkin
    • 1
  • J. B. Petit
    • 2
  • J. H. Edgar
    • 3
  1. 1.NASA Lewis Research CenterClevelandUSA
  2. 2.Lewis Research Center GroupSverdrup Technology, Inc.Brook ParkUSA
  3. 3.Kansas State UniversityManhattanUSA

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