Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers
Advances have been made in the understanding of the mechanisms that control polytype formation during the chemical vapor deposition of epitaxial SiC films on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced density of stacking faults. An important aspect of these results was an in situ pregrowth HCl/H2 etch which eliminated unwanted 3C-SiC nucleation.
KeywordsMigration Graphite Carbide
Unable to display preview. Download preview PDF.
- 6.H. S. Kong, H. J. Kim, J. A. Edmond, J. W. Palmour, J Ryu, C. H. Carter, Jr., and R. F. Davis, in Materials Research Society Symposium Proceedings, edited by T. Aselage, D. Emin, and C. Wood ( Materials Research Society, Pittsburgh, PA, 1987 ), Vol. 97, p. 233.Google Scholar
- 7.N. Kuroda, K. Shibahara, W. Yoo, S. Nishino, and H. Matsunami, Extended Abstracts 19th Conf. on Solid State Devices and Materials. Tokyo, 1987, pp. 227.Google Scholar
- 8.H. Matsunami, K. Shibahara, N. Kuroda, and S. Nishino, in Amorphous and Crystalline Silicon Carbide, ed. by G. L. Harris and C. Y.-W. Yang, Springer Proceedings in Physics, Vol. 34 ( Springer-Verlag Berlin, Heidelberg, 1989 ), pp. 34–39.Google Scholar
- 15.Cree Research, Inc., Durham, NC 27713, USAGoogle Scholar