Abstract
The present, study reports research results of a dislocation structure of epitaxial layers SiC-3C/Si, grown by CVD without a buffer layer and by “buffer” technology. X-ray differential diffractometry and TEM were used to establish the structure of the grown SiC-3C layers. It was revealed that single crystalline epitaxial films can be produced on Si(111) substrate without buffer layer at 1100°C. These films have a mosaic structure with coherent scattering block size of 300–600A near the substrate. By increasing the layer thickness, the size of blocks becomes larger with transformation of defect structure into randomly distributed dislocation ensemble.
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© 1992 Springer-Verlag Berlin Heidelberg
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Kyutt, R.N., Nikitina, I.P., Ruvimov, S.S., Baither, D. (1992). Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_29
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DOI: https://doi.org/10.1007/978-3-642-84804-9_29
Publisher Name: Springer, Berlin, Heidelberg
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