TEM Study of β-SiC Films Grown on (111) Silicon Substrates

Fekade, K.; Spencer, M. G.; Nahm, S.; Salamanca-Riba, L. G.

doi:10.1007/978-3-642-84804-9_26

K. Fekade³,
M. G. Spencer³,
S. Nahm⁴ &
…
L. G. Salamanca-Riba⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 71))

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Abstract

A transmission electron microscopy study was carried out on β-SiC films grown on Silicon {111} by the CVD technique.¹ Both plan view and cross-sectional samples were observed. A high density of interfacial twins and stacking faults were observed in the epilayers. Cross-sectional high resolution micrographs showed the interfaces to be semi-coherent. In addition, it was found that only films grown at 1100°C with flow rates of 10/10,20/20 and 30/30 were single crystalline.

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References

K. Shibahra, T. Saito, S. Nishino, and H. Matsunami, Extended Abstracts of the 18th International Conference on Solid State Devices and materials, Tokyo, 1986, pp. 717–718.
Google Scholar
J. A. Powell, L. G. Matus, M. A. Kuczmarski, C. M. Chorey, T. T. Cheng, and P. Pirouz, Appl. Phys. Lett. 51, 823 (1987)
Article ADS Google Scholar
L. G. Matus and J. A. Powell, Proceedings of the 1st International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Dec. 10–11, 1987.
Google Scholar
H. S. Kong, Y. C. Wang, J. T. Glass, and R. F. Davis, J. Mater. Res. 1, 521 (1988).
Article ADS Google Scholar
W. E. Nelson, F. A. Halden and A. Rosengreen, J. Appl. Phys. 37, 333 (1966).
Article ADS Google Scholar
H. Matsunami, S. Nishino and H. Ono, IEEE Trans. Electron. Devices ED-28 1235 (1981).
Google Scholar
M. Baranov. V. A. Dmitriev, I. P. Nikitina, and T. S. Kondvateva. See this proceeding.
Google Scholar
P. Pirouz, F. Ernst and T. T. Cheng. Mat. Res. Soc. Symp. Proc. Vol 116, (1988)
Google Scholar

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Authors and Affiliations

MSRCE, School of Engineering, Howard University, Washington, DC, 20059, USA
K. Fekade & M. G. Spencer
Engineering Materials Department, University of Maryland, College Park, MD, USA
S. Nahm & L. G. Salamanca-Riba

Authors

K. Fekade
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M. G. Spencer
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S. Nahm
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L. G. Salamanca-Riba
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Editors and Affiliations

Microelectronics Laboratory, Santa Clara University, 95053, Santa Clara, CA, USA
Cary Y. Yang & M. Mahmudur Rahman &
School of Engineering, Howard University, 20059, Washington, DC, USA
Gary L. Harris

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Fekade, K., Spencer, M.G., Nahm, S., Salamanca-Riba, L.G. (1992). TEM Study of β-SiC Films Grown on (111) Silicon Substrates. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_26

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DOI: https://doi.org/10.1007/978-3-642-84804-9_26
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84806-3
Online ISBN: 978-3-642-84804-9
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