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Hydrogen in Crystalline Semiconductors pp 175–199Cite as

Hydrogen-Related Defects in Semiconductors

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 16))

Abstract

In this chapter we will detail the various hydrogen-related defects observed in Si, Ge and m-V semiconductors grown in a H2 ambient or implanted with protons. There are a wide variety of hydrogen-related centers in these materials, most of which appear to be complexes of hydrogen with other impurities or with native defects.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ, 07974, USA

    Stephen J. Pearton Ph. D.

  2. Physics Department, State University of New York at Albany, 1400 Washington Avenue, Albany, NY, 12222, USA

    James W. Corbett Ph. D. (Distinguished Service Professor)

  3. Physics Department, Lehigh University, Bethlehem, PA, 18015, USA

    Professor Michael Stavola Ph. D.

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  1. Stephen J. Pearton Ph. D.
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  2. James W. Corbett Ph. D.
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  3. Professor Michael Stavola Ph. D.
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© 1992 Springer-Verlag Berlin Heidelberg

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Pearton, S.J., Corbett, J.W., Stavola, M. (1992). Hydrogen-Related Defects in Semiconductors. In: Hydrogen in Crystalline Semiconductors. Springer Series in Materials Science, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84778-3_8

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  • DOI: https://doi.org/10.1007/978-3-642-84778-3_8

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