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Mechanism of Reconstruction of Si(100) Surfaces

  • M. Tsukada
  • N. Shima
  • Z. Zhu
  • K. Kobayashi
  • H. Kageshima
  • N. Isshiki
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 17)

Abstract

Electronic structures of Si(100) buckled 2×1, p(2×2) and c(4×2) surfaces are revealed by first-principles LDA calculation. The c(4×2) surface is found to be the most stable structure. The mechanism of the stabilization for this surface is different from the electrostatic dipole-dipole interaction of the asymmetric dimers. The dispersion of the surface band compares fairly well with the ARUPS observation. The theoretical simulations of STM image for Si(100) surface is described.

Keywords

Scanning Tunneling Microscopy Image Surface Band Antibonding State Occupied Surface Symmetric Dime 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    R.E.Schlier and H.E.Farnsworth: J. Chem. Phys. 30, 917 (1959).CrossRefGoogle Scholar
  2. 2.
    F.Jona, H.D.Shih, A.Ignatiev, D.W.Jepsen, and P.M.Marcus: J. Phys. C10, L67 (1977).CrossRefGoogle Scholar
  3. 3.
    T.Aruga and Y.: Phys. Rev. B34, 5654 (1986).CrossRefGoogle Scholar
  4. 4.
    J.A.Appelbaum and D.R.Hamann: Surf. Sci. 74, 21 (1978).CrossRefGoogle Scholar
  5. 5.
    D.J.Chadi: Phys. Rev. Lett. 43, 43 (1979).CrossRefGoogle Scholar
  6. 6.
    J.Ihm, M.L.Cohen, and D.J.Chadi: Phys. Rev. B21, 4592 (1980).CrossRefGoogle Scholar
  7. 7.
    R.M.Tromp, R.J.Hamers, and J.E.Demuth: Phys. Rev. Lett. 55, 1303 (1985).CrossRefGoogle Scholar
  8. 8.
    R.J.Hamers, R.M.Tromp, and J.E.Demuth: Phys. Rev. B34, 5343 (1986).CrossRefGoogle Scholar
  9. 9.
    T.Tabata, T.Aruga, and Y.Murata: Surf. Sci. 179, L63 (1987).CrossRefGoogle Scholar
  10. 10.
    Y.Enta, S.Suzuki, S.Kono, and T.Sakamoto: J. Phys. Soc. Jpn. 59, 657 (1990).CrossRefGoogle Scholar
  11. 11.
    Y.Enta, S.Suzuki, and S.Kono: Phys. Rev. Lett. 65, 2704 (1990).CrossRefGoogle Scholar
  12. 12.
    R. I. G. Uhrberg, G. V. Hansson, J. M. Nicholls, and S. A. Flodstrom: Phys. Rev. B24, 4684 (1981).CrossRefGoogle Scholar
  13. 13.
    Z.Zhu, N.Shima, and M.Tsukada: Phys. Rev. B40, 11868 (1989).CrossRefGoogle Scholar
  14. 14.
    G.B.Bachelet, D.R.Hamann, and M.Schluter: Phys. Rev. B26, 4199 (1982).CrossRefGoogle Scholar
  15. 15.
    M.Tsukada, K.Kobayashi, and S.Ohnishi: J. Vac. Sci. Technol. A8, 160 (1990).Google Scholar
  16. 16.
    J.Tersoff and D.R.Hamann: Phys. Rev. B31, 805 (1985).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1992

Authors and Affiliations

  • M. Tsukada
    • 1
  • N. Shima
    • 1
  • Z. Zhu
    • 1
  • K. Kobayashi
    • 1
  • H. Kageshima
    • 1
  • N. Isshiki
    • 2
  1. 1.Department of Physics, Faculty of ScienceUniversity of TokyoBunkyo-ku, Tokyo 113Japan
  2. 2.Institute for Knowledge and Intelligence ScienceKao CorporationSumida-ku, Tokyo 131Japan

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