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Full Localization of the 2D Electron Gas in Si MOSFETs at 30 mK and at High Magnetic Fields

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High Magnetic Fields in Semiconductor Physics III

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 101))

Abstract

Scaling theory predicts that the number of delocalized states in the quantum Hall regime should be vanishingly small as the temperature approaches zero. This has been observed previously only in AlGaAs/GaAs and other types of heterojunctions and not heretofore in Si-MOSFETs. We report on measurements in low and high mobility Si-MOSFETs in the temperature range from 30 mK to 4.2 K and in magnetic fields up to 14 T. Full localization of the 2D electron gas is observed in the low temperature limit; however, the scaling behaviour of the magnetoconductivity is seen to be dependent on the Landau level number N.

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References

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Author information

Authors and Affiliations

  1. Division of Physics, National Research Council of Canada, Ottawa, K1A 0R6, Canada

    M. D’Iorio

  2. Institute for the Metrological Service, Andreevskaya nab. 2, SU-117334, Moscow, USSR

    V. M. Pudalov & S. M. Semenchinsky

Authors
  1. M. D’Iorio
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  2. V. M. Pudalov
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  3. S. M. Semenchinsky
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Am Hubland, W-8700, Würzburg, Fed. Rep. of Germany

    Gottfried Landwehr

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© 1992 Springer-Verlag Berlin Heidelberg

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D’Iorio, M., Pudalov, V.M., Semenchinsky, S.M. (1992). Full Localization of the 2D Electron Gas in Si MOSFETs at 30 mK and at High Magnetic Fields. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_7

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  • DOI: https://doi.org/10.1007/978-3-642-84408-9_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84410-2

  • Online ISBN: 978-3-642-84408-9

  • eBook Packages: Springer Book Archive

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