The 3D Analogue of the Quantum Hall Effect in HgSe:Fe and Its Temperature Dependence

  • I. Laue
  • O. Portugall
  • M. von Ortenberg
  • W. Dobrowolski
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

We present temperature dependent measurements of oscillations in the Hall resistance in Hg1−x Fe x Se referred as “the 3D analogue of the quantum Hall effect” [1] in magnetic fields up to 18 Tesla and temperatures between 4.2 and 50 K. Highly doped material (x ≈ 0.1) exhibits a strong modulation of the Hall resistance which cannot be explained by fluctuations of the carrier concentration in a system with a pinned Fermi energy. The measurements are compared with simultaneously recorded Shubnikov-de Haas-data.

Keywords

Helium Haas Verse HgSe 

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References

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    M von Ortenberg, O Portugall, W Dobrowolski, R R Galazka, F Herlach, J Phys C 21, 5393 (1988).CrossRefGoogle Scholar
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    J Kossut, in: Semimetals and Semiconductors 25, Academic Press, 1988.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • I. Laue
    • 1
  • O. Portugall
    • 1
  • M. von Ortenberg
    • 1
  • W. Dobrowolski
    • 2
  1. 1.Institut für Halbleiterphysik und OptikHochmagnetfeldanlage der Technischen Universität BraunschweigBraunschweigGermany
  2. 2.Institute of PhysicsPolish Academy of SciencesWarsawPoland

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