The 3D Analogue of the Quantum Hall Effect in HgSe:Fe and Its Temperature Dependence
We present temperature dependent measurements of oscillations in the Hall resistance in Hg1−x Fe x Se referred as “the 3D analogue of the quantum Hall effect”  in magnetic fields up to 18 Tesla and temperatures between 4.2 and 50 K. Highly doped material (x ≈ 0.1) exhibits a strong modulation of the Hall resistance which cannot be explained by fluctuations of the carrier concentration in a system with a pinned Fermi energy. The measurements are compared with simultaneously recorded Shubnikov-de Haas-data.
KeywordsHelium Haas Verse HgSe
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