Γ-X Intervalley Electron Transfer Rates in Type-II AlxGa1−xAs/AlAs Superlattices

  • J. Nunnenkamp
  • J. Kuhl
  • K. Ploog
  • J. Feldmann
  • E. O. Göbel
  • P. Dawson
  • C. T. Foxon
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 53)

Abstract

Reduction of the GaAs well width in (GaAs) m /(AlAs) n (m,n = number of monolayers) superlattices (SL) permits tuning of the lowest Γ-conduction band state in the GaAs above the X-minimum in the AlAs layers for m ≤ 12. In such a staggered type-II SL the highest valence band state is contained in the GaAs layers and the lowest conduction band state in the AlAs slabs. After photoexcitation of hot electrons and holes in the confined Γ conduction- and valence band states of the GaAs, the holes stay in the GaAs during relaxation and the electrons scatter to the energetically lower X-related states of the AlAs.

Keywords

GaAs 

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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1990

Authors and Affiliations

  • J. Nunnenkamp
    • 1
  • J. Kuhl
    • 1
  • K. Ploog
    • 1
  • J. Feldmann
    • 2
  • E. O. Göbel
    • 2
  • P. Dawson
    • 3
  • C. T. Foxon
    • 3
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed. Rep. of Germany
  2. 2.Fachbereich Physik & Zentrum für MaterialwissenschaftenPhilipps UniversitätMarburgFed. Rep. of Germany
  3. 3.Philips Research LaboratoriesRedhill, SurreyUK

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