Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial Stress

  • J. Lutz
  • F. Kuchar
  • G. Dorda
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)


The phase diagram for the population of the lowest subbands in stressed Si (001) MOSFETs is deduced from Quantum Hall effect and Shubnikov-de-Haas data. Very good qualitative agreement is found with results of the random-phase approximation by Takada and Ando.


Landau Level Uniaxial Stress Quantum Hall Effect Good Qualitative Agreement Hall Resistance 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. Lutz
    • 1
  • F. Kuchar
    • 1
  • G. Dorda
    • 2
  1. 1.Institut für FestkörperphysikUniversität and Ludwig Boltzmann Institut für FestkörperphysikWienAustria
  2. 2.Siemens ForschungslaboratorienMünchenFed. Rep. of Germany

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