Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial Stress
The phase diagram for the population of the lowest subbands in stressed Si (001) MOSFETs is deduced from Quantum Hall effect and Shubnikov-de-Haas data. Very good qualitative agreement is found with results of the random-phase approximation by Takada and Ando.
KeywordsLandau Level Uniaxial Stress Quantum Hall Effect Good Qualitative Agreement Hall Resistance
Unable to display preview. Download preview PDF.