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Surface-Field Induced InAs Tunnel Junctions in High Magnetic Fields

  • U. Kunze
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

Tunneling from an electron inversion layer into bulk valence states is studied in Yb/oxide/degenerate p-InAs tunnel junctions. Magneto-tunneling characteristics yield the effective electric field for Zener transitions and demonstrate a striking difference to Esaki diodes.

Keywords

Bias Voltage Tunnel Junction Forward Bias Longitudinal Magnetic Field Effective Electric Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • U. Kunze
    • 1
    • 2
  1. 1.Institut für ElektrophysikTechnische Universität BraunschweigBraunschweigFed. Rep. of Germany
  2. 2.Hochmagnetfeldanlage der Physikalischen InstituteTechnischen Universität BraunschweigBraunschweigFed. Rep. of Germany

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