Surface-Field Induced InAs Tunnel Junctions in High Magnetic Fields
Tunneling from an electron inversion layer into bulk valence states is studied in Yb/oxide/degenerate p-InAs tunnel junctions. Magneto-tunneling characteristics yield the effective electric field for Zener transitions and demonstrate a striking difference to Esaki diodes.
KeywordsBias Voltage Tunnel Junction Forward Bias Longitudinal Magnetic Field Effective Electric Field
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- 1.U. Kunze and W. Kowalsky: to appear in Appl. Phys. Lett.Google Scholar