Surface-Field Induced InAs Tunnel Junctions in High Magnetic Fields
Tunneling from an electron inversion layer into bulk valence states is studied in Yb/oxide/degenerate p-InAs tunnel junctions. Magneto-tunneling characteristics yield the effective electric field for Zener transitions and demonstrate a striking difference to Esaki diodes.
KeywordsEtion Cond Verse
Unable to display preview. Download preview PDF.
- 1.U. Kunze and W. Kowalsky: to appear in Appl. Phys. Lett.Google Scholar