Abstract
Photoluminescence measurements in magnetic fields up to 10 T on a 80 nm wide modulation doped (InGa)As/InP quantum well are reported. Magneto-luminescence from three electron subbands is observed. Magneto-transport measurements (with B both perpendicular and parallel to the plane of the well) also demonstrate occupancy of three subbands. Discontinuities in the Landau level transition energies observed in photoluminescence at certain field values are interpreted in terms of charge redistribution effects between the subbands.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Hayes, D.G., Skolnick, M.S., Eaves, L., Taylor, L.L., Bass, S.J. (1989). Magneto-optical and Magneto-transport Investigations of a Wide Modulation Doped (InGa)As/InP Quantum Well. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics II. Springer Series in Solid-State Sciences, vol 87. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83810-1_47
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DOI: https://doi.org/10.1007/978-3-642-83810-1_47
Publisher Name: Springer, Berlin, Heidelberg
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