Parallel and Perpendicular Field Magnetotransport Studies of MBE Grown GaAs Doping Superlattices and Slab Doped InSb Formed by Selective Doping with Silicon
Selective doping in the form of slabs or spikes of dopants offers new possibilities for lowdimensional structures. The results for spike-doped superlattices in GaAs can be interpreted in terms of a nearly free-electron model with the electrons occupying a Fermi surface which has ‘neck’ and ‘belly’ orbits for the magnetic field applied perpendicular to the doping planes and with magnetic break-down occurring at high fields with B parallel to the doping planes. The carrier concentration is varied by applying hydrostatic pressure and the change in orbit area with carrier concentration is consistent with this model.
KeywordsGaAs Gallium Haas Alphen
Unable to display preview. Download preview PDF.
- 1.F. Koch, A. Zrenner, M. Zachau: Two Dimensional SystemsSpringer Ser. Solid-State Sci., 67, 175 (1986)Google Scholar
- 2.A. Zrenner, H. Reisinger, F. Koch, K. Ploog, J.C.Maan: Phys. Rev. B33, 5607 (1986)Google Scholar
- 3.A. Zrenner, F. Koch, R.L. Williams, R.A. Stradling: To be publishedGoogle Scholar
- 6.A.S. Noreika, M.H, Francombe, C.E.C. Wood: J. App. Phys. 52, 7416 (1981)Google Scholar