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Parallel and Perpendicular Field Magnetotransport Studies of MBE Grown GaAs Doping Superlattices and Slab Doped InSb Formed by Selective Doping with Silicon

  • R. Droopad
  • S. D. Parker
  • E. Skuras
  • R. A. Stradling
  • R. L. Williams
  • R. B. Beall
  • J. J. Harris
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 87)

Abstract

Selective doping in the form of slabs or spikes of dopants offers new possibilities for lowdimensional structures. The results for spike-doped superlattices in GaAs can be interpreted in terms of a nearly free-electron model with the electrons occupying a Fermi surface which has ‘neck’ and ‘belly’ orbits for the magnetic field applied perpendicular to the doping planes and with magnetic break-down occurring at high fields with B parallel to the doping planes. The carrier concentration is varied by applying hydrostatic pressure and the change in orbit area with carrier concentration is consistent with this model.

Keywords

Carrier Concentration Fermi Surface Cyclotron Orbit Selective Doping Applied Hydrostatic Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • R. Droopad
    • 1
  • S. D. Parker
    • 1
  • E. Skuras
    • 1
  • R. A. Stradling
    • 1
  • R. L. Williams
    • 1
  • R. B. Beall
    • 2
  • J. J. Harris
    • 2
  1. 1.Blackett LaboratoryImperial CollegeLondonUK
  2. 2.Philips Research LaboratoriesRedhill, SurreyUK

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