Abstract
Thanks to advances in ultra-high vacuum technology, it has recently become possible to realize epitaxial semiconductor/metal/semiconductor (SMS) structures [1, 2] using a Si/CoSi2/Si sandwich. The rather small lattice mismatch (~ 1.2%) between Si and CoSi2 crystals as well as their similar cubic structures allows the production of monocrystalline Si/CoSi2 and Si/CoSi2/Si heterostructures. These SMS structures open the way to promising ultra-low base resistance devices for millimeter wave applications.
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© 1988 Springer-Verlag Berlin Heidelberg
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Rosencher, E., Badoz, P.A. (1988). Physics and Fabrication of Metal-Semiconductor Microstructures. In: Heinrich, H., Bauer, G., Kuchar, F. (eds) Physics and Technology of Submicron Structures. Springer Series in Solid-State Sciences, vol 83. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83431-8_24
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DOI: https://doi.org/10.1007/978-3-642-83431-8_24
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